Last edited by Aragami
Friday, July 17, 2020 | History

5 edition of High Speed Heterostructure Devices found in the catalog.

High Speed Heterostructure Devices

by Patrick Roblin

  • 109 Want to read
  • 9 Currently reading

Published by Cambridge University Press .
Written in English

    Subjects:
  • Semi-conductors & super-conductors,
  • Transistors,
  • Low voltage integrated circuit,
  • Integrated Circuits,
  • Semiconductors,
  • Very high speed integrated circuits,
  • Technology,
  • Technology & Industrial Arts,
  • Science/Mathematics,
  • Electronics - Semiconductors,
  • Engineering - Electrical & Electronic,
  • Technology / Engineering / Electrical,
  • Very high speed integrated cir,
  • Electronics - Circuits - Integrated,
  • Heterostructures

  • The Physical Object
    FormatHardcover
    Number of Pages600
    ID Numbers
    Open LibraryOL7753546M
    ISBN 100521781523
    ISBN 109780521781527

    The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for.

    Studies of InAIAs/InGaAs and GaInP/GaAs heterostructure FET's for high speed applications. Yi-Jen Chan. University of Michigan., 0 Reviews. From inside the book. What people are saying - Write a review. We haven't found any reviews in the usual places. Contents. In , Kiehl joined AT&T Bell Laboratories, Murray Hill, New Jersey, as a Member of Technical Staff and began research on compound semiconductor devices for high-speed communications applications. He was a leading contributor to Bell Labs research in heterostructure electronics.

      Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important Author: John D. Cressler. Communication and information systems are subject to rapid and highly so­ phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis­ tors (HEMTs), are among the fastest and most advanced high-frequency : Springer-Verlag Wien.


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High Speed Heterostructure Devices by Patrick Roblin Download PDF EPUB FB2

High-Speed Heterostructure Devices describes modern high-speed semiconductor devices intended for both graduate students and practicing engineers. The book details the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these by: High Speed Heterostructure Devices.

Edited by Richard A. Kiehl, T.C.L. Gerhard Sollner. Vol Pages () Download full volume. Previous volume. Next volume. Book chapter Full text access Chapter 5 - GaAs-Based and InP-Based Heterostructure Bipolar Transistors. Tadao Ishibashi. Pages   High-Speed Heterostructure Devices describes modern high-speed semiconductor devices intended for both graduate students and practicing engineers.

The book details the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. The emphasis is on heterostructure devices of the immediate Cited by: High-Speed Heterostructure Devices describes modern high-speed semiconductor devices intended for both graduate students and practicing engineers.

The book details the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. High-Speed Heterostructure Devices describes modern high-speed semiconductor devices intended for both graduate students and practicing engineers.

The book details the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices.5/5(1). COVID Resources. Reliable information about the coronavirus (COVID) is available from the World Health Organization (current situation, international travel).Numerous High Speed Heterostructure Devices book frequently-updated resource results are available from this ’s WebJunction has pulled together information and resources to assist library staff as they consider how to handle.

Purchase High Speed Heterostructure Devices, Volume 41 - 1st Edition. Print Book & E-Book. ISBNHigh-Speed Heterostructure Devices describes modern high-speed semiconductor devices intended for both graduate students and practicing engineers.

Get this from a library. High speed heterostructure devices. [Richard A Kiehl; T C L Gerhard Sollner;] -- Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology.

This volume is aimed at the graduate student or working researcher who needs a. Advanced High Speed Devices by Michael S. Shur (English) Hardcover Book Free Shi See more like this High Speed Dynamo Electric Machinery by Henry Metcalf Hobart Paperback Book.

Written for graduate students and practicing engineers, this book describes modern high-speed semiconductor devices. The book details the underlying physics of heterostructures, as well as some of the most recent techniques for modeling and simulating these devices. The book focuses on heterostructure devices such as MODFET, HBT, and RTD.

Read "High Speed Heterostructure Devices" by Albert C. Beer available from Rakuten Kobo. Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology.

Th Brand: Elsevier Science. A commercial software Atlas by Silvaco is utilized to predict performance of heterostructure devices with gates lengths of 5 μm, 2 μm and 1 μm, made possible by the ternary carbide in a.

GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible―as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to Cited by: * If you have purchased this book, do send Patrick Roblin an email at [email protected] to get the username and password for accessing the MATLAB and homework-solution webpages.

Please specify whether your are a researcher, instructor or graduate student, and kindly give the name of the institution you are working with and your professional. Introduces the physical principles and operational characteristics of high speed semiconductor devices.

Intended for use by advanced students as well as professional engineers and scientists involved in semiconductor device research, it includes the most advanced and important topics in high speed semiconductor devices.

Initial chapters cover material properties, advanced. High Speed Heterostructure Devices, Volume 41 (Semiconductors & Semimetals) by Editor-Robert K. Willardson; Editor-Richard A.

Kiehl; Editor-T. C.L. Gerhard Sollner; Series Editor-Albert C. Beer; Series Editor-Eicke R. Weber and a great selection of related books, art and collectibles available now at High-Speed Heterostructure Devices Patrick Roblin and Hans Rohdin Publisher: Additional Lecture Material: Excerpt from the Book Introduction: Consider the simple pastoral scene of a lake with a waterfall on one side and a small creek on the other.

There is clearly a continuous flow of water from the waterfall, through the lake and into the. The double-heterostructure sample consisted of Å, low-temperature GaN buffer, μ m of N + (Si = 10 18 cm −3) GaN, μ m undoped InGaN, and μ m P + GaN (P = 3 × 10 17 cm −3 Mg-doped).

In the immediate vicinity of the N-GaN/Al 2 O 3 interface, the defect density was high but was reduced with increasing film thickness.

Such circuits exploit, as active devices, advanced bipolar transistors (heterojunction bipolar transistors, HBTs) or heterostructure-based field-effect transistors (such as the high electron mobility transistors, HEMTs).

Besides active devices, high-speed circuits also include passive (distributed or concentrated) elements. An introduction to the physical principles and operational characteristics of high-speed semiconductor devices is presented.

Consideration is given to materials and technologies for high-speed devices, device building blocks, the submicron MOSFET, homogeneous field-effect transistors, and heterostructure field-effect transistors.

Also considered are quantum-effect Cited by: A heterojunction is an interface that occurs between two layers or regions of dissimilar semiconducting materials have unequal band gaps as opposed to a is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors.High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers.

This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices.